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MMBTH10 Технические параметры
Rochester Electronics, LLC MMBTH10 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 50mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | MATTE TIN | |
| Additional Feature | LOW NOISE | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE | |
| Power - Max | 225mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA 10V | |
| Voltage - Collector Emitter Breakdown (Max) | 25V | |
| Transition Frequency | 650MHz | |
| Frequency - Transition | 650MHz | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B | |
| Collector-Base Capacitance-Max | 0.7pF | |
| RoHS Status | ROHS3 Compliant |
MMBTH10 Документы
- DatasheetsONSM-S-A0003590120 Datasheet
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