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MMBTH10LT1 Технические параметры

Rochester Electronics, LLC  MMBTH10LT1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Surface Mount YES
Transistor Element Material SILICON
Number of Elements 1 Element
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish TIN LEAD
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status COMMERCIAL
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
JEDEC-95 Code TO-236AB
Transition Frequency 650MHz
Collector Current-Max (IC) 0.025A
Collector-Emitter Voltage-Max 25V
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 0.7pF
RoHS Status Non-RoHS Compliant
Просмотр сходства

MMBTH10LT1 Документы

MMBTH10LT1 brand manufacturers: Rochester Electronics, LLC, Anli stock, MMBTH10LT1 reference price.Rochester Electronics, LLC. MMBTH10LT1 parameters, MMBTH10LT1 Datasheet PDF and pin diagram description download.You can use the MMBTH10LT1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MMBTH10LT1 pin diagram and circuit diagram and usage method of function,MMBTH10LT1 electronics tutorials.You can download from the Anli.