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MPSH11 Технические параметры
Rochester Electronics, LLC MPSH11 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 50mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Bulk | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | TIN LEAD | |
| Additional Feature | LOW NOISE | |
| Terminal Position | BOTTOM |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| JESD-30 Code | O-PBCY-T3 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE | |
| Power - Max | 350mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA 10V | |
| Voltage - Collector Emitter Breakdown (Max) | 25V | |
| Transition Frequency | 650MHz | |
| Frequency - Transition | 650MHz | |
| Highest Frequency Band | VERY HIGH FREQUENCY B | |
| Collector-Base Capacitance-Max | 0.7pF | |
| RoHS Status | Non-RoHS Compliant |
MPSH11 Документы
- DatasheetsFAIRS19714 Datasheet
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