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MPSW63G Технические параметры
Rochester Electronics, LLC MPSW63G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 Long Body | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 500mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Bulk | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | TIN SILVER COPPER |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | BOTTOM | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Pin Count | 3 | |
| JESD-30 Code | O-PBCY-T3 | |
| Qualification Status | COMMERCIAL | |
| Power - Max | 1W | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP - Darlington | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA 5V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100μA, 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 30V | |
| Transition Frequency | 125MHz | |
| Frequency - Transition | 125MHz | |
| RoHS Status | ROHS3 Compliant |
MPSW63G Документы
- DatasheetsONSMS13883 Datasheet ONSMS11625 Datasheet
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