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MSA1162YT1G Технические параметры

Rochester Electronics, LLC  MSA1162YT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59
Current-Collector (Ic) (Max) 100mA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 80MHz
RoHS Status ROHS3 Compliant
Просмотр сходства

MSA1162YT1G Документы

MSA1162YT1G brand manufacturers: Rochester Electronics, LLC, Anli stock, MSA1162YT1G reference price.Rochester Electronics, LLC. MSA1162YT1G parameters, MSA1162YT1G Datasheet PDF and pin diagram description download.You can use the MSA1162YT1G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find MSA1162YT1G pin diagram and circuit diagram and usage method of function,MSA1162YT1G electronics tutorials.You can download from the Anli.