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MX0912B251Y Технические параметры

Rochester Electronics, LLC  MX0912B251Y technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Package / Case SOT-439A
Mounting Type Chassis Mount
Supplier Device Package CDFM2
Mfr Rochester Electronics, LLC
Current-Collector (Ic) (Max) 15A
Product Status Obsolete
Package Bulk
Свойство продукта Значение свойства
Operating Temperature -
Series -
Power - Max 690W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce -
Gain 8dB
Voltage - Collector Emitter Breakdown (Max) 60V
Frequency - Transition 1.215GHz
Noise Figure (dB Typ @ f) -
Просмотр сходства
MX0912B251Y brand manufacturers: Rochester Electronics, LLC, Anli stock, MX0912B251Y reference price.Rochester Electronics, LLC. MX0912B251Y parameters, MX0912B251Y Datasheet PDF and pin diagram description download.You can use the MX0912B251Y Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MX0912B251Y pin diagram and circuit diagram and usage method of function,MX0912B251Y electronics tutorials.You can download from the Anli.