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NJL21193DG Технические параметры
Rochester Electronics, LLC NJL21193DG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-264-5 | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 16A | |
| Number of Elements | 1 Element | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 5Terminations | |
| Terminal Finish | TIN | |
| Terminal Position | SINGLE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 5 | |
| JESD-30 Code | R-PSFM-T5 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Power - Max | 200W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 8A 5V | |
| Current - Collector Cutoff (Max) | 100μA | |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 3.2A, 16A | |
| Voltage - Collector Emitter Breakdown (Max) | 250V | |
| Transition Frequency | 4MHz | |
| Frequency - Transition | 4MHz | |
| RoHS Status | ROHS3 Compliant |
NJL21193DG Документы
- DatasheetsONSMS11590 Datasheet ONSM-S-A0000246523 Datasheet
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