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NTD20N06L Технические параметры
Rochester Electronics, LLC NTD20N06L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Terminal Finish | TIN LEAD | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 240 | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 20A | |
| Drain-source On Resistance-Max | 0.048Ohm | |
| Pulsed Drain Current-Max (IDM) | 60A | |
| DS Breakdown Voltage-Min | 60V | |
| Avalanche Energy Rating (Eas) | 128 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| RoHS Status | Non-RoHS Compliant |
NTD20N06L Документы
- DatasheetsONSMS29139 Datasheet ONSMS29139 Datasheet
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