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NTD5862N-1G Технические параметры

Rochester Electronics, LLC  NTD5862N-1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Current - Continuous Drain (Id) @ 25℃ 98A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 115W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Свойство продукта Значение свойства
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.7mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Просмотр сходства

NTD5862N-1G Документы

NTD5862N-1G brand manufacturers: Rochester Electronics, LLC, Anli stock, NTD5862N-1G reference price.Rochester Electronics, LLC. NTD5862N-1G parameters, NTD5862N-1G Datasheet PDF and pin diagram description download.You can use the NTD5862N-1G Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find NTD5862N-1G pin diagram and circuit diagram and usage method of function,NTD5862N-1G electronics tutorials.You can download from the Anli.