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NTD5867NL-1G Технические параметры

Rochester Electronics, LLC  NTD5867NL-1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 20A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 36W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish MATTE TIN
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 39m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.05Ohm
Pulsed Drain Current-Max (IDM) 76A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 18 mJ
RoHS Status ROHS3 Compliant
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NTD5867NL-1G Документы

NTD5867NL-1G brand manufacturers: Rochester Electronics, LLC, Anli stock, NTD5867NL-1G reference price.Rochester Electronics, LLC. NTD5867NL-1G parameters, NTD5867NL-1G Datasheet PDF and pin diagram description download.You can use the NTD5867NL-1G Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find NTD5867NL-1G pin diagram and circuit diagram and usage method of function,NTD5867NL-1G electronics tutorials.You can download from the Anli.