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NTD6414AN-1G Технические параметры

Rochester Electronics, LLC  NTD6414AN-1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 32A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 100W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish MATTE TIN
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 37m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1.45pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 32A
Drain-source On Resistance-Max 0.037Ohm
Pulsed Drain Current-Max (IDM) 117A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 154 mJ
RoHS Status ROHS3 Compliant
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NTD6414AN-1G Документы

NTD6414AN-1G brand manufacturers: Rochester Electronics, LLC, Anli stock, NTD6414AN-1G reference price.Rochester Electronics, LLC. NTD6414AN-1G parameters, NTD6414AN-1G Datasheet PDF and pin diagram description download.You can use the NTD6414AN-1G Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find NTD6414AN-1G pin diagram and circuit diagram and usage method of function,NTD6414AN-1G electronics tutorials.You can download from the Anli.