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NTD6416AN-1G Технические параметры

Rochester Electronics, LLC  NTD6416AN-1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK
Current - Continuous Drain (Id) @ 25℃ 17A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 71W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Свойство продукта Значение свойства
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 81mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant

NTD6416AN-1G Документы

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