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Rochester Electronics, LLC NTHD4502NT1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Arrays | |
Марка | ||
Mounting Type | Surface Mount | |
Package / Case | 8-SMD, Flat Lead | |
Surface Mount | YES | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 2.2A | |
Number of Elements | 2 Elements | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
JESD-609 Code | e0 | |
Pbfree Code | yes | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 8Terminations | |
Terminal Finish | TIN LEAD | |
Terminal Form | C BEND | |
Peak Reflow Temperature (Cel) | 240 | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Pin Count | 8 |
Свойство продукта | Значение свойства | |
---|---|---|
JESD-30 Code | R-XDSO-C8 | |
Qualification Status | COMMERCIAL | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
Operating Mode | ENHANCEMENT MODE | |
Power - Max | 640mW | |
FET Type | 2 N-Channel (Dual) | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 85m Ω @ 2.9A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V | |
Drain to Source Voltage (Vdss) | 30V | |
Drain Current-Max (Abs) (ID) | 2.2A | |
Drain-source On Resistance-Max | 0.085Ohm | |
DS Breakdown Voltage-Min | 30V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
FET Feature | Logic Level Gate | |
Feedback Cap-Max (Crss) | 25 pF | |
RoHS Status | Non-RoHS Compliant |