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NTLJD2105LTBG Технические параметры

Rochester Electronics, LLC  NTLJD2105LTBG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.5A
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish MATTE TIN
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 265
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code S-PDSO-C6
Qualification Status COMMERCIAL
Configuration COMPLEX
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 520mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Drain to Source Voltage (Vdss) 8V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain-source On Resistance-Max 0.05Ohm
DS Breakdown Voltage-Min 8V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
Просмотр сходства

NTLJD2105LTBG Документы

NTLJD2105LTBG brand manufacturers: Rochester Electronics, LLC, Anli stock, NTLJD2105LTBG reference price.Rochester Electronics, LLC. NTLJD2105LTBG parameters, NTLJD2105LTBG Datasheet PDF and pin diagram description download.You can use the NTLJD2105LTBG Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find NTLJD2105LTBG pin diagram and circuit diagram and usage method of function,NTLJD2105LTBG electronics tutorials.You can download from the Anli.