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NTMD3N08LR2 Технические параметры

Rochester Electronics, LLC  NTMD3N08LR2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.3A
Number of Elements 1 Element
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Terminal Finish TIN LEAD
Additional Feature ULTRA-LOW RESISTANCE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Свойство продукта Значение свойства
JESD-30 Code R-PDSO-G8
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 3.1W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 215m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drain Current-Max (Abs) (ID) 2.3A
Drain-source On Resistance-Max 0.215Ohm
Pulsed Drain Current-Max (IDM) 25A
DS Breakdown Voltage-Min 80V
Avalanche Energy Rating (Eas) 25 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status Non-RoHS Compliant
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NTMD3N08LR2 Документы

NTMD3N08LR2 brand manufacturers: Rochester Electronics, LLC, Anli stock, NTMD3N08LR2 reference price.Rochester Electronics, LLC. NTMD3N08LR2 parameters, NTMD3N08LR2 Datasheet PDF and pin diagram description download.You can use the NTMD3N08LR2 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find NTMD3N08LR2 pin diagram and circuit diagram and usage method of function,NTMD3N08LR2 electronics tutorials.You can download from the Anli.