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NTMD6601NR2G Технические параметры

Rochester Electronics, LLC  NTMD6601NR2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.1A
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Terminal Finish TIN
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
Свойство продукта Значение свойства
JESD-30 Code R-PDSO-G8
Qualification Status COMMERCIAL
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 600mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 215m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drain Current-Max (Abs) (ID) 1.1A
Drain-source On Resistance-Max 0.215Ohm
DS Breakdown Voltage-Min 80V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 30 pF
RoHS Status ROHS3 Compliant
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NTMD6601NR2G Документы

NTMD6601NR2G brand manufacturers: Rochester Electronics, LLC, Anli stock, NTMD6601NR2G reference price.Rochester Electronics, LLC. NTMD6601NR2G parameters, NTMD6601NR2G Datasheet PDF and pin diagram description download.You can use the NTMD6601NR2G Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find NTMD6601NR2G pin diagram and circuit diagram and usage method of function,NTMD6601NR2G electronics tutorials.You can download from the Anli.