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NTMD6N03R2 Технические параметры

Rochester Electronics, LLC  NTMD6N03R2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6A
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Terminal Finish TIN LEAD
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Свойство продукта Значение свойства
JESD-30 Code R-PDSO-G8
Qualification Status COMMERCIAL
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 1.29W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 24V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.032Ohm
Pulsed Drain Current-Max (IDM) 30A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 325 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status Non-RoHS Compliant
Просмотр сходства

NTMD6N03R2 Документы

NTMD6N03R2 brand manufacturers: Rochester Electronics, LLC, Anli stock, NTMD6N03R2 reference price.Rochester Electronics, LLC. NTMD6N03R2 parameters, NTMD6N03R2 Datasheet PDF and pin diagram description download.You can use the NTMD6N03R2 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find NTMD6N03R2 pin diagram and circuit diagram and usage method of function,NTMD6N03R2 electronics tutorials.You can download from the Anli.