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NTMSD6N303R2G Технические параметры

Rochester Electronics, LLC  NTMSD6N303R2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SOIC
Current - Continuous Drain (Id) @ 25℃ 6A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Power Dissipation (Max) 2W Ta
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series FETKY™
Свойство продукта Значение свойства
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 32mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 24V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
FET Feature Schottky Diode (Isolated)
RoHS Status ROHS3 Compliant
Просмотр сходства

NTMSD6N303R2G Документы

NTMSD6N303R2G brand manufacturers: Rochester Electronics, LLC, Anli stock, NTMSD6N303R2G reference price.Rochester Electronics, LLC. NTMSD6N303R2G parameters, NTMSD6N303R2G Datasheet PDF and pin diagram description download.You can use the NTMSD6N303R2G Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find NTMSD6N303R2G pin diagram and circuit diagram and usage method of function,NTMSD6N303R2G electronics tutorials.You can download from the Anli.