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NTTFS4800NTAG Технические параметры

Rochester Electronics, LLC  NTTFS4800NTAG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 5A Ta 32A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 11.5V
Number of Elements 1 Element
Power Dissipation (Max) 860mW Ta 33.8W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
Terminal Finish MATTE TIN
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code S-XDSO-F5
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 964pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 16.6nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.027Ohm
Pulsed Drain Current-Max (IDM) 57A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 36.6 mJ
RoHS Status ROHS3 Compliant

NTTFS4800NTAG Документы

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