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Rochester Electronics, LLC NTTFS4800NTAG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | ||
Mounting Type | Surface Mount | |
Package / Case | 8-PowerWDFN | |
Surface Mount | YES | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 5A Ta 32A Tc | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V 11.5V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 860mW Ta 33.8W Tc | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
JESD-609 Code | e3 | |
Pbfree Code | yes | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 5Terminations | |
Terminal Finish | MATTE TIN | |
Terminal Position | DUAL | |
Terminal Form | FLAT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Свойство продукта | Значение свойства | |
---|---|---|
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Pin Count | 8 | |
JESD-30 Code | S-XDSO-F5 | |
Qualification Status | COMMERCIAL | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Operating Mode | ENHANCEMENT MODE | |
Case Connection | DRAIN | |
FET Type | N-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 20m Ω @ 20A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 964pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 16.6nC @ 10V | |
Drain to Source Voltage (Vdss) | 30V | |
Vgs (Max) | ±20V | |
Drain Current-Max (Abs) (ID) | 5A | |
Drain-source On Resistance-Max | 0.027Ohm | |
Pulsed Drain Current-Max (IDM) | 57A | |
DS Breakdown Voltage-Min | 30V | |
Avalanche Energy Rating (Eas) | 36.6 mJ | |
RoHS Status | ROHS3 Compliant |