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Классификация Марка Марка О Anli Запрос цены
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NTTS2P02R2G Технические параметры

Rochester Electronics, LLC  NTTS2P02R2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.4A Ta
Drive Voltage (Max Rds On, Min Rds On) 2.5V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 780mW Ta
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Terminal Finish MATTE TIN
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-PDSO-G8
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±8V
Drain Current-Max (Abs) (ID) 2.4A
Drain-source On Resistance-Max 0.09Ohm
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
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NTTS2P02R2G Документы

NTTS2P02R2G brand manufacturers: Rochester Electronics, LLC, Anli stock, NTTS2P02R2G reference price.Rochester Electronics, LLC. NTTS2P02R2G parameters, NTTS2P02R2G Datasheet PDF and pin diagram description download.You can use the NTTS2P02R2G Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find NTTS2P02R2G pin diagram and circuit diagram and usage method of function,NTTS2P02R2G electronics tutorials.You can download from the Anli.