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NUS3116MTR2G Технические параметры
Rochester Electronics, LLC NUS3116MTR2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | PMIC - Battery Management | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 8-WDFN Exposed Pad | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| Terminal Finish | MATTE TIN | |
| Terminal Position | BOTTOM |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | S-XBCC-N8 | |
| Function | Power Management | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 4.4A | |
| Drain-source On Resistance-Max | 0.05Ohm | |
| DS Breakdown Voltage-Min | 12V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| RoHS Status | ROHS3 Compliant |
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