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SSM2220P Технические параметры
Rochester Electronics, LLC SSM2220P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | 8-DIP (0.300, 7.62mm) | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 20mA | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Tube | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 8Terminations | |
| Terminal Finish | TIN LEAD |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | LOW NOISE | |
| Peak Reflow Temperature (Cel) | 240 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDIP-T8 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | PNP | |
| Transistor Type | 2 PNP (Dual) | |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 100μA, 1mA | |
| Voltage - Collector Emitter Breakdown (Max) | 36V | |
| Transition Frequency | 190MHz | |
| Frequency - Transition | 190MHz | |
| DC Current Gain-Min (hFE) | 80 | |
| RoHS Status | Non-RoHS Compliant |
SSM2220P Документы
- DatasheetsANDIS17958 Datasheet
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