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2SB1132T100R Технические параметры
ROHM Semiconductor 2SB1132T100R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 7 Weeks | |
| Contact Plating | Copper, Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-243AA | |
| Number of Pins | 4Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 32V | |
| Collector-Emitter Saturation Voltage | -200mV | |
| Number of Elements | 1 Element | |
| hFEMin | 82 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 1997 | |
| JESD-609 Code | e2 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN COPPER | |
| Voltage - Rated DC | -32V | |
| Max Power Dissipation | 2W | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -1A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 150MHz | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | 2SB1132 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-F3 | |
| Element Configuration | Single | |
| Power Dissipation | 2W | |
| Case Connection | COLLECTOR | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 150MHz | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 32V | |
| Max Collector Current | 1A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA 3V | |
| Current - Collector Cutoff (Max) | 500nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA | |
| Transition Frequency | 150MHz | |
| Max Breakdown Voltage | 32V | |
| Collector Base Voltage (VCBO) | 40V | |
| Emitter Base Voltage (VEBO) | -5V | |
| Continuous Collector Current | -1A | |
| VCEsat-Max | 0.5 V | |
| Collector-Base Capacitance-Max | 30pF | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
2SB1132T100R Документы
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