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2SB1181TLP Технические параметры

ROHM Semiconductor  2SB1181TLP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ROHM Semiconductor
Factory Lead Time 10 Weeks
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Current-Collector (Ic) (Max) 1A
Number of Elements 1 Element
hFEMin 82
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish TIN COPPER
Voltage - Rated DC -80V
Max Power Dissipation 1W
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1A
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SB1181
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 100mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -1A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2SB1181TLP Документы

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