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2SB1184TLQ Технические параметры

ROHM Semiconductor  2SB1184TLQ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ROHM Semiconductor
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
hFEMin 82
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn98Cu2)
Voltage - Rated DC -60V
Max Power Dissipation 1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating -3A
Frequency 70MHz
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SB1184
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power Dissipation 1W
Transistor Application SWITCHING
Gain Bandwidth Product 70MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 2A
Transition Frequency 70MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -3A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2SB1184TLQ Документы

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