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2SB1188T100Q Технические параметры

ROHM Semiconductor  2SB1188T100Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ROHM Semiconductor
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage -32V
Number of Elements 1 Element
hFEMin 82
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
HTS Code 8541.21.00.95
Voltage - Rated DC -32V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -2A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SB1188
Pin Count 3
Element Configuration Single
Case Connection COLLECTOR
Power - Max 2W
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 800mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 32V
Transition Frequency 100MHz
Max Breakdown Voltage 32V
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -5V
VCEsat-Max 0.8 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2SB1188T100Q Документы

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