Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
2SB1188T100R Технические параметры
ROHM Semiconductor 2SB1188T100R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ROHM Semiconductor | |
| Contact Plating | Copper, Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-243AA | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | -32V | |
| Number of Elements | 1 Element | |
| hFEMin | 82 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 1997 | |
| JESD-609 Code | e2 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN COPPER | |
| Voltage - Rated DC | -32V | |
| Max Power Dissipation | 500mW | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -2A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 100MHz | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | 2SB1188 | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Power Dissipation | 2W | |
| Case Connection | COLLECTOR | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 100MHz | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 32V | |
| Max Collector Current | 2A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA 3V | |
| Current - Collector Cutoff (Max) | 1μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A | |
| Transition Frequency | 100MHz | |
| Max Breakdown Voltage | 32V | |
| Collector Base Voltage (VCBO) | 40V | |
| Emitter Base Voltage (VEBO) | -5V | |
| VCEsat-Max | 0.8 V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
2SB1188T100R Документы
- PCN Design/SpecificationMult Devices Marking 16/Apr/2018
- Datasheets2SB1188,1182,1240
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ