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2SD1862TV2R Технические параметры

ROHM Semiconductor  2SD1862TV2R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ROHM Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case 3-SIP
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 32V
Number of Elements 1 Element
hFEMin 180
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Voltage - Rated DC 32V
Max Power Dissipation 1W
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 800mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2SD1862TV2R Документы

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