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BA12004BF-E2 Технические параметры

ROHM Semiconductor  BA12004BF-E2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка ROHM Semiconductor
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 16-SOIC (0.173, 4.40mm Width)
Number of Pins 16Pins
Collector-Emitter Breakdown Voltage 60V
Operating Temperature -40°C~85°C TA
Packaging Cut Tape (CT)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
ECCN Code EAR99
Max Power Dissipation 620mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 620mW
Transistor Type 7 NPN Darlington
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA 2V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 500μA, 350mA
Max Breakdown Voltage 60V
RoHS Status ROHS3 Compliant
Просмотр сходства

BA12004BF-E2 Документы

BA12004BF-E2 brand manufacturers: ROHM Semiconductor, Anli stock, BA12004BF-E2 reference price.ROHM Semiconductor. BA12004BF-E2 parameters, BA12004BF-E2 Datasheet PDF and pin diagram description download.You can use the BA12004BF-E2 Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find BA12004BF-E2 pin diagram and circuit diagram and usage method of function,BA12004BF-E2 electronics tutorials.You can download from the Anli.