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BAT54CHYFHT116 Технические параметры

Rohm Semiconductor  BAT54CHYFHT116 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
Mfr Rohm Semiconductor
Product Status Active
Current - Average Rectified (Io) (per Diode) 200mA (DC)
Peak Rep Rev Volt 30(V)
Peak Forward Voltage 0.8(V)
Operating Temperature Classification Military
Package Type SSD
Peak Reverse Recovery Time 50(ns)
Maximum Forward Current 200(mA)
Operating Temp Range -55C to 150C
Rad Hardened No
Rectifier Type Schottky Diode
Mounting Surface Mount
Qualification AEC-Q101
Number of Elements per Chip 1
Vr - Reverse Voltage 30 V
Ir - Reverse Current 2 uA
Maximum Operating Temperature + 150 C
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Vrrm - Repetitive Reverse Voltage 30 V
Manufacturer ROHM Semiconductor
Свойство продукта Значение свойства
Brand ROHM Semiconductor
If - Forward Current 200 mA
RoHS Details
Ifsm - Forward Surge Current 600 mA
Series Automotive, AEC-Q101
Packaging Tape and Reel
Subcategory Diodes & Rectifiers
Technology Si
Pin Count 3
Configuration Dual Common Cathode
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Schottky
Current - Reverse Leakage @ Vr 2 μA @ 25 V
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA
Operating Temperature - Junction 150°C
Voltage - DC Reverse (Vr) (Max) 30 V
Product Type Schottky Diodes & Rectifiers
Reverse Recovery Time 50ns
Peak Reverse Current 2(uA)
Peak Non-Repetitive Surge Current 0.6(A)
Diode Configuration 1 Pair Common Cathode
Repetitive Peak Reverse Voltage 30V
Reverse Recovery Time (trr) 50 ns
Product Schottky Diodes
Vf - Forward Voltage 800 mV
Product Category Schottky Diodes & Rectifiers
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