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- BR24T04NUX-WGTR
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BR24T04NUX-WGTR Технические параметры
ROHM Semiconductor BR24T04NUX-WGTR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ROHM Semiconductor | |
| Surface Mount | YES | |
| Number of Terminals | 8Terminals | |
| Voltage, Rating | 150 V | |
| Package Description | 2 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, VSON-8 | |
| Package Style | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | |
| Number of Words Code | 512Words Codes | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Equivalence Code | SOLCC8,.11,20 | |
| Operating Temperature-Min | -40 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 85 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BR24T04NUX-WGTR | |
| Clock Frequency-Max (fCLK) | 0.4 MHz | |
| Number of Words | 512 wordsWord | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Package Code | HVSON | |
| Package Shape | RECTANGULAR | |
| Manufacturer | ROHM Semiconductor | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Risk Rank | 5.59 | |
| Part Package Code | SOIC | |
| Tolerance | 0.5 % | |
| Pbfree Code | Yes | |
| Temperature Coefficient | 25 ppm/°C | |
| Resistance | 33.6 kΩ | |
| Max Operating Temperature | 155 °C | |
| Min Operating Temperature | -55 °C | |
| Composition | Thin Film | |
| Subcategory | EEPROMs |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power Rating | 250 mW | |
| Technology | CMOS | |
| Terminal Position | DUAL | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Number of Functions | 1Function | |
| Terminal Pitch | 0.5 mm | |
| Reach Compliance Code | compliant | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDSO-N8 | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 5.5 V | |
| Power Supplies | 1.8/5 V | |
| Temperature Grade | INDUSTRIAL | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Operating Mode | SYNCHRONOUS | |
| Supply Current-Max | 0.002 mA | |
| Organization | 512X8 | |
| Seated Height-Max | 0.6 mm | |
| Memory Width | 8 | |
| Standby Current-Max | 0.000002 A | |
| Memory Density | 4096 bit | |
| Parallel/Serial | SERIAL | |
| Memory IC Type | EEPROM | |
| Serial Bus Type | MICROWIRE | |
| Endurance | 1000000 Write/Erase Cycles | |
| Write Cycle Time-Max (tWC) | 5 ms | |
| Data Retention Time-Min | 40 | |
| Write Protection | HARDWARE | |
| I2C Control Byte | 1010DDMR | |
| Height | 650 µm | |
| Width | 2 mm | |
| Length | 3 mm |
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