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BR25G512FJ-3GE2 Технические параметры

ROHM Semiconductor  BR25G512FJ-3GE2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка ROHM Semiconductor
Factory Lead Time 9 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Memory Types Non-Volatile
Operating Temperature -40°C~85°C TA
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Additional Feature SEATED HT-CALCULATED
Voltage - Supply 1.8V~5.5V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1Function
Terminal Pitch 1.27mm
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
JESD-30 Code R-PDSO-G8
Supply Voltage-Max (Vsup) 5.5V
Supply Voltage-Min (Vsup) 1.8V
Memory Size 512Kb 64K x 8
Operating Mode SYNCHRONOUS
Clock Frequency 10MHz
Memory Format EEPROM
Memory Interface SPI
Organization 64KX8
Memory Width 8
Write Cycle Time - Word, Page 5ms
Memory Density 524288 bit
Parallel/Serial SERIAL
Serial Bus Type SPI
Write Cycle Time-Max (tWC) 5ms
Length 4.9mm
Height Seated (Max) 1.65mm
Width 3.9mm
RoHS Status ROHS3 Compliant
Просмотр сходства
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