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BR93C46-WDW6TP Технические параметры
ROHM Semiconductor BR93C46-WDW6TP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ROHM Semiconductor | |
| Mounting Type | Surface Mount | |
| Package / Case | 119-BGA | |
| Surface Mount | YES | |
| Supplier Device Package | 119-PBGA (14x22) | |
| Number of Terminals | 8Terminals | |
| Package | Tray | |
| Base Product Number | CY7C1062 | |
| Mfr | Infineon Technologies | |
| Product Status | Obsolete | |
| Memory Types | Volatile | |
| Package Description | TSSOP, TSSOP8,.25 | |
| Package Style | SMALL OUTLINE | |
| Number of Words Code | 512Words Codes | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Equivalence Code | TSSOP8,.25 | |
| Operating Temperature-Min | -40 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 85 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BR93C46-WDW6TP | |
| Clock Frequency-Max (fCLK) | 2 MHz | |
| Number of Words | 512 wordsWord | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Package Code | TSSOP | |
| Package Shape | SQUARE | |
| Manufacturer | ROHM Semiconductor | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ROHM CO LTD | |
| Risk Rank | 5.78 | |
| Part Package Code | TSSOP | |
| Operating Temperature | 0°C ~ 70°C (TA) | |
| Series | - | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Subcategory | EEPROMs |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Technology | SRAM - Asynchronous | |
| Voltage - Supply | 3V ~ 3.6V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Number of Functions | 1Function | |
| Terminal Pitch | 0.65 mm | |
| Reach Compliance Code | compliant | |
| Pin Count | 8 | |
| JESD-30 Code | S-PDSO-G8 | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 5.5 V | |
| Power Supplies | 3/5 V | |
| Temperature Grade | INDUSTRIAL | |
| Supply Voltage-Min (Vsup) | 2.5 V | |
| Memory Size | 16Mbit | |
| Operating Mode | SYNCHRONOUS | |
| Supply Current-Max | 0.002 mA | |
| Access Time | 10 ns | |
| Memory Format | SRAM | |
| Memory Interface | Parallel | |
| Organization | 512X2 | |
| Seated Height-Max | 1.2 mm | |
| Memory Width | 2 | |
| Write Cycle Time - Word, Page | 10ns | |
| Standby Current-Max | 0.000005 A | |
| Memory Density | 1024 bit | |
| Parallel/Serial | SERIAL | |
| Memory IC Type | EEPROM | |
| Serial Bus Type | MICROWIRE | |
| Endurance | 1000000 Write/Erase Cycles | |
| Write Cycle Time-Max (tWC) | 5 ms | |
| Data Retention Time-Min | 40 | |
| Write Protection | SOFTWARE | |
| Memory Organization | 512K x 32 | |
| Width | 3 mm | |
| Length | 4.4 mm |
Индекс :
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