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BR93G66FVT-3BGE2 Технические параметры

Rohm Semiconductor  BR93G66FVT-3BGE2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Surface Mount YES
Supplier Device Package 8-TSSOP-B
Number of Terminals 8Terminals
Mfr Rohm Semiconductor
Product Status Active
Memory Types Non-Volatile
Base Product Number BR93G66
Maximum Clock Frequency 3 MHz
Maximum Operating Temperature + 85 C
Supply Voltage-Max 5.5 V
Minimum Operating Temperature - 40 C
Factory Pack QuantityFactory Pack Quantity 3000
Active Read Current - Max 3 mA
Supply Voltage-Min 1.7 V
Mounting Styles SMD/SMT
Interface Type 3-Wire
Data Retention 40 Year
Part # Aliases BR93G66FVT-3B
Manufacturer ROHM Semiconductor
Brand ROHM Semiconductor
RoHS Details
Package Description TSSOP,
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Number of Words Code 256Words Codes
Package Body Material PLASTIC/EPOXY
Operating Temperature-Min -40 °C
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 85 °C
Rohs Code Yes
Manufacturer Part Number BR93G66FVT-3BGE2
Clock Frequency-Max (fCLK) 3 MHz
Number of Words 256 wordsWord
Supply Voltage-Nom (Vsup) 5 V
Package Code TSSOP
Package Shape RECTANGULAR
Part Life Cycle Code Active
Свойство продукта Значение свойства
Ihs Manufacturer ROHM CO LTD
Risk Rank 2.28
Series -
Operating Temperature -40°C ~ 105°C (TA)
Packaging MouseReel
Additional Feature ALSO AVAILABLE 2.5V OPERATES WITH 2MHZ AND 1.7V OPERATES WITH 1MHZ, SEATED HT-CALCULATED
Subcategory Memory & Data Storage
Voltage - Supply 1.7V ~ 5.5V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1Function
Terminal Pitch 0.65 mm
Reach Compliance Code compliant
JESD-30 Code R-PDSO-G8
Operating Supply Voltage 1.7 V to 5.5 V
Supply Voltage-Max (Vsup) 5.5 V
Temperature Grade INDUSTRIAL
Supply Voltage-Min (Vsup) 4.5 V
Memory Size 4Kbit
Operating Mode SYNCHRONOUS
Clock Frequency 3 MHz
Supply Current-Max 3 mA
Memory Format EEPROM
Memory Interface Microwire
Organization 256 x 16
Seated Height-Max 1.2 mm
Memory Width 16
Write Cycle Time - Word, Page 5ms
Product Type EEPROM
Memory Density 4096 bit
Parallel/Serial SERIAL
Memory IC Type EEPROM
Serial Bus Type 3-WIRE
Write Cycle Time-Max (tWC) 5 ms
Product Category EEPROM
Memory Organization 256 x 16
Width 3 mm
Length 4.4 mm
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