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BS2103F-E2 Технические параметры
ROHM Semiconductor BS2103F-E2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | PMIC - Gate Drivers | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.173, 4.40mm Width) | |
| Number of Pins | 8Pins | |
| Driver Configuration | Half-Bridge | |
| Logic voltage-VIL, VIH | 1V 2.6V | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2016 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Voltage - Supply | 10V~18V | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Max Output Current | 130mA | |
| Input Type | Non-Inverting | |
| Rise / Fall Time (Typ) | 200ns 100ns | |
| Interface IC Type | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | |
| Channel Type | Independent | |
| Number of Drivers | 2Drivers | |
| Gate Type | IGBT, N-Channel MOSFET | |
| Current - Peak Output (Source, Sink) | 60mA 130mA | |
| High Side Voltage - Max (Bootstrap) | 600V | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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