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BS2114F-E2 Технические параметры
ROHM Semiconductor BS2114F-E2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | PMIC - Gate Drivers | |
| Марка | ROHM Semiconductor | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.173, 4.40mm Width) | |
| Surface Mount | YES | |
| Driver Configuration | High-Side or Low-Side | |
| Logic voltage-VIL, VIH | 0.8V 2.6V | |
| Operating Temperature | -40°C~125°C TA | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Voltage - Supply | 10V~20V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Number of Functions | 1Function |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Supply Voltage | 15V | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PDSO-G8 | |
| Input Type | Inverting | |
| Rise / Fall Time (Typ) | 30ns 30ns | |
| Interface IC Type | HALF BRIDGE BASED MOSFET DRIVER | |
| Channel Type | Independent | |
| Number of Drivers | 2Drivers | |
| Turn On Time | 0.37 µs | |
| Gate Type | IGBT, N-Channel MOSFET | |
| High Side Driver | YES | |
| Turn Off Time | 0.37 µs | |
| High Side Voltage - Max (Bootstrap) | 600V | |
| Length | 5mm | |
| Height Seated (Max) | 1.71mm | |
| Width | 4.4mm | |
| RoHS Status | ROHS3 Compliant |
BS2114F-E2 Документы
- DatasheetsBS2114F App'l Note
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