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BSM120D12P2C005 Технические параметры

ROHM Semiconductor  BSM120D12P2C005 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ROHM Semiconductor
Factory Lead Time 25 Weeks
Package / Case Module
Mount Screw
Number of Pins 10Pins
Number of Elements 2 Elements
Current - Continuous Drain (Id) @ 25℃ 120A Tc
Published 2013
Packaging Bulk
Operating Temperature -40°C~150°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Max Power Dissipation 780W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X8
Свойство продукта Значение свойства
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.7V @ 22mA
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 10V
Drain to Source Voltage (Vdss) 1200V 1.2kV
Continuous Drain Current (ID) 120A
Threshold Voltage 2.7V
Gate to Source Voltage (Vgs) 22V
Pulsed Drain Current-Max (IDM) 240A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Silicon Carbide (SiC)
Nominal Vgs 2.7 V
Width 45.6mm
Length 122mm
Height 21.1mm
RoHS Status ROHS3 Compliant
REACH SVHC Unknown
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BSM120D12P2C005 Документы

BSM120D12P2C005 brand manufacturers: ROHM Semiconductor, Anli stock, BSM120D12P2C005 reference price.ROHM Semiconductor. BSM120D12P2C005 parameters, BSM120D12P2C005 Datasheet PDF and pin diagram description download.You can use the BSM120D12P2C005 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find BSM120D12P2C005 pin diagram and circuit diagram and usage method of function,BSM120D12P2C005 electronics tutorials.You can download from the Anli.