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BSM180D12P3C007 Технические параметры

ROHM Semiconductor  BSM180D12P3C007 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ROHM Semiconductor
Factory Lead Time 25 Weeks
Mounting Type Surface Mount
Package / Case Module
Surface Mount NO
Current - Continuous Drain (Id) @ 25℃ 180A Tc
Number of Elements 2 Elements
Operating Temperature 175°C TJ
Packaging Bulk
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10Terminations
ECCN Code EAR99
Max Power Dissipation 880W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X10
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5.6V @ 50mA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
Drain to Source Voltage (Vdss) 1200V 1.2kV
Drain Current-Max (Abs) (ID) 180A
Pulsed Drain Current-Max (IDM) 360A
DS Breakdown Voltage-Min 1200V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Silicon Carbide (SiC)
RoHS Status ROHS3 Compliant
Просмотр сходства
BSM180D12P3C007 brand manufacturers: ROHM Semiconductor, Anli stock, BSM180D12P3C007 reference price.ROHM Semiconductor. BSM180D12P3C007 parameters, BSM180D12P3C007 Datasheet PDF and pin diagram description download.You can use the BSM180D12P3C007 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find BSM180D12P3C007 pin diagram and circuit diagram and usage method of function,BSM180D12P3C007 electronics tutorials.You can download from the Anli.