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BSS5130T116 Технические параметры

ROHM Semiconductor  BSS5130T116 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ROHM Semiconductor
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Current-Collector (Ic) (Max) 1A
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Power - Max 200mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 380mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 30V
Frequency - Transition 320MHz
RoHS Status ROHS3 Compliant
Просмотр сходства
BSS5130T116 brand manufacturers: ROHM Semiconductor, Anli stock, BSS5130T116 reference price.ROHM Semiconductor. BSS5130T116 parameters, BSS5130T116 Datasheet PDF and pin diagram description download.You can use the BSS5130T116 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BSS5130T116 pin diagram and circuit diagram and usage method of function,BSS5130T116 electronics tutorials.You can download from the Anli.