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- Transistors - Bipolar (BJT) - Single, Pre-Biased
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- DTA024EEBTL
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DTA024EEBTL Технические параметры
ROHM Semiconductor DTA024EEBTL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 20 Weeks | |
| Mount | Surface Mount | |
| Package / Case | SOT-89 | |
| Weight | 29.993795mg | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 1 Element | |
| hFEMin | 60 | |
| Packaging | Tape & Reel (TR) | |
| Published | 2015 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 150mW | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| JESD-30 Code | R-PDSO-F3 | |
| Output Voltage | -70mV | |
| Polarity | PNP | |
| Element Configuration | Single | |
| Transistor Application | SWITCHING | |
| Collector Emitter Voltage (VCEO) | 150mV | |
| Max Collector Current | 30mA | |
| Max Frequency | 250MHz | |
| Transition Frequency | 250MHz | |
| Max Breakdown Voltage | 50V | |
| DC Current Gain-Min (hFE) | 60 | |
| Continuous Collector Current | -100mA | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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