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DTA114TMT2L Технические параметры

ROHM Semiconductor  DTA114TMT2L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ROHM Semiconductor
Factory Lead Time 7 Weeks
Mount Surface Mount
Package / Case SOT-723
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
hFEMin 100
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR
HTS Code 8541.21.00.75
Свойство продукта Значение свойства
Voltage - Rated DC -50V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
Polarity PNP
Element Configuration Single
Power Dissipation 150mW
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) -5V
DC Current Gain-Min (hFE) 100
Continuous Collector Current -100mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

DTA114TMT2L Документы

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