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DTA115TUAT106 Технические параметры

ROHM Semiconductor  DTA115TUAT106 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ROHM Semiconductor
Factory Lead Time 7 Weeks
Mount Surface Mount
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
hFEMin 100
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR
Свойство продукта Значение свойства
HTS Code 8541.21.00.75
Voltage - Rated DC -50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
Polarity PNP
Element Configuration Single
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
DC Current Gain-Min (hFE) 100
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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DTA115TUAT106 Документы

DTA115TUAT106 brand manufacturers: ROHM Semiconductor, Anli stock, DTA115TUAT106 reference price.ROHM Semiconductor. DTA115TUAT106 parameters, DTA115TUAT106 Datasheet PDF and pin diagram description download.You can use the DTA115TUAT106 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find DTA115TUAT106 pin diagram and circuit diagram and usage method of function,DTA115TUAT106 electronics tutorials.You can download from the Anli.