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DTA124ECAHZGT116 Технические параметры

Rohm Semiconductor  DTA124ECAHZGT116 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Supplier Device Package SST3
Number of Terminals 3Terminals
Transistor Element Material SILICON
Mfr Rohm Semiconductor
Product Status Active
Current-Collector (Ic) (Max) 100 mA
Typical Resistor Ratio 1
Package Type SOT-23
Typical Input Resistor 22
Collector Current (DC) 0.1(A)
Emitter-Collector Voltage (Max) 50(V)
DC Current Gain 56
MSL MSL 1 - Unlimited
Qualification AEC-Q101
Transistor Polarity Single PNP
Pd - Power Dissipation 350 mW
Maximum Operating Temperature + 150 C
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Part # Aliases DTA124ECAHZG
Manufacturer ROHM Semiconductor
Brand ROHM Semiconductor
Maximum Operating Frequency 250 MHz
RoHS Details
Package Style SMALL OUTLINE
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code Yes
Transition Frequency-Nom (fT) 250 MHz
Manufacturer Part Number DTA124ECAHZGT116
Package Shape RECTANGULAR
Свойство продукта Значение свойства
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Risk Rank 1.54
Series Automotive, AEC-Q101
Packaging Tape and Reel
ECCN Code EAR99
Type PNP
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Subcategory Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G3
Output Voltage 300 mV
Configuration Single
Power Dissipation 0.35(W)
Power - Max 200 mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Product Type BJTs - Bipolar Transistors - Pre-Biased
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA, 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Frequency - Transition 250 MHz
Collector Current-Max (IC) 0.1 A
DC Current Gain-Min (hFE) 56
Resistor - Base (R1) 22 kOhms
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 22 kOhms
Collector-Emitter Voltage-Max 50 V
Product Category Bipolar Transistors - Pre-Biased
Просмотр сходства
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