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DTA143EEFRATL Технические параметры

Rohm Semiconductor  DTA143EEFRATL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Supplier Device Package EMT3
Number of Terminals 3Terminals
Transistor Element Material SILICON
Mfr Rohm Semiconductor
Product Status Not For New Designs
Current-Collector (Ic) (Max) 100 mA
Base Product Number DTA143
Qualification AEC-Q101
Typical Resistor Ratio 1
Pd - Power Dissipation 150 mW
Transistor Polarity PNP
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 30
Typical Input Resistor 4.7 kOhms
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Part # Aliases DTA143EEFRA
Manufacturer ROHM Semiconductor
Brand ROHM Semiconductor
Maximum DC Collector Current - 100 mA
RoHS Details
Collector- Emitter Voltage VCEO Max - 50 V
Package Description SC-75A, 3 PIN
Package Style SMALL OUTLINE
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code Yes
Transition Frequency-Nom (fT) 250 MHz
Manufacturer Part Number DTA143EEFRATL
Свойство продукта Значение свойства
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Risk Rank 1.54
Series Automotive, AEC-Q101
Packaging Cut Tape
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Subcategory Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G3
Output Voltage - 100 mV
Configuration Single
Power - Max 150 mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Product Type BJTs - Bipolar Transistors - Pre-Biased
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Frequency - Transition 250 MHz
Collector Current-Max (IC) 0.1 A
DC Current Gain-Min (hFE) 30
Resistor - Base (R1) 4.7 kOhms
Continuous Collector Current - 100 mA
Resistor - Emitter Base (R2) 4.7 kOhms
Collector-Emitter Voltage-Max 50 V
Product Category Bipolar Transistors - Pre-Biased
DTA143EEFRATL brand manufacturers: Rohm Semiconductor, Anli stock, DTA143EEFRATL reference price.Rohm Semiconductor. DTA143EEFRATL parameters, DTA143EEFRATL Datasheet PDF and pin diagram description download.You can use the DTA143EEFRATL Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find DTA143EEFRATL pin diagram and circuit diagram and usage method of function,DTA143EEFRATL electronics tutorials.You can download from the Anli.