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DTA143XCAHZGT116 Технические параметры

Rohm Semiconductor  DTA143XCAHZGT116 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Supplier Device Package SST3
Number of Terminals 3Terminals
Transistor Element Material SILICON
Mfr Rohm Semiconductor
Product Status Active
Current-Collector (Ic) (Max) 100 mA
DC Current Gain 30
Emitter-Collector Voltage (Max) 50(V)
Collector Current (DC) 0.1(A)
Typical Input Resistor 4.7
Package Type SOT-23
Typical Resistor Ratio 0.48
MSL MSL 1 - Unlimited
Qualification AEC-Q101
Transistor Polarity Single PNP
Pd - Power Dissipation 350 mW
Maximum Operating Temperature + 150 C
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Part # Aliases DTA143XCAHZG
Manufacturer ROHM Semiconductor
Brand ROHM Semiconductor
Maximum Operating Frequency 250 MHz
RoHS Details
Package Style SMALL OUTLINE
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code Yes
Transition Frequency-Nom (fT) 250 MHz
Manufacturer Part Number DTA143XCAHZGT116
Package Shape RECTANGULAR
Свойство продукта Значение свойства
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Risk Rank 1.53
Series Automotive, AEC-Q101
Packaging Tape and Reel
ECCN Code EAR99
Type PNP
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 2.1
Subcategory Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G3
Output Voltage 300 mV
Configuration Single
Power Dissipation 0.35(W)
Power - Max 200 mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Product Type BJTs - Bipolar Transistors - Pre-Biased
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Frequency - Transition 250 MHz
Collector Current-Max (IC) 0.1 A
DC Current Gain-Min (hFE) 30
Resistor - Base (R1) 4.7 kOhms
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10 kOhms
Collector-Emitter Voltage-Max 50 V
Product Category Bipolar Transistors - Pre-Biased
Просмотр сходства
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