[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

DTB114GCHZGT116 Технические параметры

Rohm Semiconductor  DTB114GCHZGT116 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Supplier Device Package SST3
Number of Terminals 3Terminals
Transistor Element Material SILICON
Mfr Rohm Semiconductor
Product Status Active
Current-Collector (Ic) (Max) 500 mA
Package Type SOT-23
Collector Current (DC) 0.5(A)
Emitter-Collector Voltage (Max) 50(V)
DC Current Gain 56
MSL MSL 1 - Unlimited
Qualification AEC-Q101
Transistor Polarity Single PNP
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 200 mW
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 56 at 50 mA, 5 V
Typical Input Resistor 10 kOhms
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Part # Aliases DTB114GCHZG
Manufacturer ROHM Semiconductor
Brand ROHM Semiconductor
Maximum Operating Frequency 200 MHz
RoHS Details
Collector- Emitter Voltage VCEO Max 50 V
Package Style SMALL OUTLINE
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code Yes
Transition Frequency-Nom (fT) 200 MHz
Свойство продукта Значение свойства
Manufacturer Part Number DTB114GCHZGT116
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Risk Rank 1.6
Series Automotive, AEC-Q101
Packaging Tape and Reel
ECCN Code EAR99
Type PNP
Additional Feature BUILT IN BIAS RESISTOR
Subcategory Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G3
Configuration Single
Power Dissipation 0.2(W)
Power - Max 200 mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Product Type BJTs - Bipolar Transistors - Pre-Biased
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V
Current - Collector Cutoff (Max) 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Frequency - Transition 200 MHz
Collector Current-Max (IC) 0.5 A
DC Current Gain-Min (hFE) 56
Continuous Collector Current 500mA
Resistor - Emitter Base (R2) 10 kOhms
Collector-Emitter Voltage-Max 50 V
Product Category Bipolar Transistors - Pre-Biased
Просмотр сходства
DTB114GCHZGT116 brand manufacturers: Rohm Semiconductor, Anli stock, DTB114GCHZGT116 reference price.Rohm Semiconductor. DTB114GCHZGT116 parameters, DTB114GCHZGT116 Datasheet PDF and pin diagram description download.You can use the DTB114GCHZGT116 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find DTB114GCHZGT116 pin diagram and circuit diagram and usage method of function,DTB114GCHZGT116 electronics tutorials.You can download from the Anli.