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DTB114TKT146 Технические параметры

ROHM Semiconductor  DTB114TKT146 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ROHM Semiconductor
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 59Pins
hFEMin 100
Number of Elements 1 Element
Collector-Emitter Breakdown Voltage 40V
Published 2012
Packaging Tape & Reel (TR)
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR
HTS Code 8541.21.00.75
Voltage - Rated DC -50V
Max Power Dissipation 200mW
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DTB114
Pin Count 3
JESD-30 Code R-PDSO-G3
Polarity PNP
Element Configuration Single
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 200MHz
Frequency - Transition 200MHz
Resistor - Base (R1) 10 k Ω
VCEsat-Max 0.3 V
RoHS Status ROHS3 Compliant
Radiation Hardening No
Lead Free Lead Free
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