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DTB123TCHZGT116 Технические параметры

Rohm Semiconductor  DTB123TCHZGT116 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Supplier Device Package SST3
Number of Terminals 3Terminals
Transistor Element Material SILICON
Mfr Rohm Semiconductor
Product Status Active
Current-Collector (Ic) (Max) 500 mA
Package Type SOT-23
Typical Input Resistor 2.2
Collector Current (DC) 0.5(A)
Emitter-Collector Voltage (Max) 40(V)
DC Current Gain 100
MSL MSL 1 - Unlimited
Qualification AEC-Q101
Transistor Polarity Single PNP
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 200 mW
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 100 at 50 mA, 5 V
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Part # Aliases DTB123TCHZG
Manufacturer ROHM Semiconductor
Brand ROHM Semiconductor
Maximum Operating Frequency 200 MHz
RoHS Details
Collector- Emitter Voltage VCEO Max 40 V
Package Style SMALL OUTLINE
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code Yes
Transition Frequency-Nom (fT) 200 MHz
Свойство продукта Значение свойства
Manufacturer Part Number DTB123TCHZGT116
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Risk Rank 1.59
Series Automotive, AEC-Q101
Packaging Tape and Reel
ECCN Code EAR99
Type PNP
Additional Feature BUILT IN BIAS RESISTOR
Subcategory Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G3
Configuration Single
Power Dissipation 0.2(W)
Power - Max 200 mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Product Type BJTs - Bipolar Transistors - Pre-Biased
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 5V
Current - Collector Cutoff (Max) 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Frequency - Transition 200 MHz
Collector Current-Max (IC) 0.5 A
DC Current Gain-Min (hFE) 100
Resistor - Base (R1) 2.2 kOhms
Continuous Collector Current 500mA
Collector-Emitter Voltage-Max 40 V
Product Category Bipolar Transistors - Pre-Biased
Просмотр сходства
DTB123TCHZGT116 brand manufacturers: Rohm Semiconductor, Anli stock, DTB123TCHZGT116 reference price.Rohm Semiconductor. DTB123TCHZGT116 parameters, DTB123TCHZGT116 Datasheet PDF and pin diagram description download.You can use the DTB123TCHZGT116 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find DTB123TCHZGT116 pin diagram and circuit diagram and usage method of function,DTB123TCHZGT116 electronics tutorials.You can download from the Anli.