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- DTC114EMFHAT2L
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DTC114EMFHAT2L Технические параметры
Rohm Semiconductor DTC114EMFHAT2L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | SOT-723 | |
| Surface Mount | YES | |
| Supplier Device Package | VMT3 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Rohm Semiconductor | |
| Product Status | Not For New Designs | |
| Current-Collector (Ic) (Max) | 100 mA | |
| Base Product Number | DTC114 | |
| Typical Resistor Ratio | 1 | |
| Package Type | VMT | |
| Typical Input Resistor | 10 | |
| Collector Current (DC) | 0.1(A) | |
| Emitter-Collector Voltage (Max) | 50(V) | |
| DC Current Gain | 30 | |
| MSL | MSL 1 - Unlimited | |
| Qualification | AEC-Q101 | |
| Transistor Polarity | Single NPN | |
| Pd - Power Dissipation | 150 mW | |
| Maximum Operating Temperature | + 150 C | |
| DC Collector/Base Gain hfe Min | 30 | |
| Factory Pack QuantityFactory Pack Quantity | 8000 | |
| Mounting Styles | SMD/SMT | |
| Part # Aliases | DTC114EMFHA | |
| Manufacturer | ROHM Semiconductor | |
| Brand | ROHM Semiconductor | |
| Maximum DC Collector Current | 100 mA | |
| RoHS | Details | |
| Package Description | SC-105AA, 3 PIN | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| Manufacturer Part Number | DTC114EMFHAT2L |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Risk Rank | 1.76 | |
| Series | Automotive, AEC-Q101 | |
| Packaging | Tape and Reel | |
| ECCN Code | EAR99 | |
| Type | NPN | |
| Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1 | |
| Subcategory | Transistors | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PDSO-F3 | |
| Output Voltage | 100 mV | |
| Configuration | Single | |
| Power Dissipation | 0.15(W) | |
| Power - Max | 150 mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | |
| Transistor Type | NPN - Pre-Biased | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | |
| Frequency - Transition | 250 MHz | |
| Power Dissipation-Max (Abs) | 0.15 W | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 30 | |
| Resistor - Base (R1) | 10 kOhms | |
| Continuous Collector Current | 100mA | |
| Resistor - Emitter Base (R2) | 10 kOhms | |
| Collector-Emitter Voltage-Max | 50 V | |
| Product Category | Bipolar Transistors - Pre-Biased |
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