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DTC114ESATP Технические параметры

ROHM Semiconductor  DTC114ESATP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ROHM Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case SC-72 Formed Leads
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
hFEMin 30
Packaging Tape & Box (TB)
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.75
Voltage - Rated DC 50V
Max Power Dissipation 300mW
Свойство продукта Значение свойства
Current Rating 50mA
Base Part Number DTC114
Pin Count 3
Polarity NPN
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
Resistor - Base (R1) 10 k Ω
Continuous Collector Current 50mA
Resistor - Emitter Base (R2) 10 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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DTC114ESATP Документы

DTC114ESATP brand manufacturers: ROHM Semiconductor, Anli stock, DTC114ESATP reference price.ROHM Semiconductor. DTC114ESATP parameters, DTC114ESATP Datasheet PDF and pin diagram description download.You can use the DTC114ESATP Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find DTC114ESATP pin diagram and circuit diagram and usage method of function,DTC114ESATP electronics tutorials.You can download from the Anli.